PRELIMINARY
RT3N66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
Unit：mm
DESCRIPTION
RT3N66M is
a
composite transistor built with
2.1
RT1N430 chip and RT1N430 chip in SC-88 package.
1.25
FEATURE
Silicon epitaxial type
①
②
③
⑥
⑤
④
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥
RTr1
④
⑤
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
R1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
R2
RTr2
⑥:COLLECTOR1
R1
JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
RATING
UNIT
V
MARKING
50
6
V
CBO
V
EBO
V
CEO
V
⑥ ⑤ ④
50
V
100
mA
mA
mW
℃
I
I
C
N6 6
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
200
CM
.
150
P
T
T
C
＋150
-55～＋150
j
① ② ③
℃
Storage temperature
stg
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
