ＲＴ１Ｐ４４１Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P441T
RT1P441U
RATING
RT1P441M
-50
-10
-50
-100
-200
150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P441C
RT1P441S
UNIT
V
V
V
mA
mA
mW
℃
℃
125（※）
+125
-55�½�+125
125
450
+150
-55�½�+150
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-5mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
50
-0.1
-2.3
-1.1
47
1.0
150
-0.3
-5.0
61
1.1
LIMIT
TYP
MAX
-0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
-0.8
33
0.9
V
CE
=-6V，I
E
=10mA
TYPICAL CHARACTERISTICS
Input on voltage-C
ollector current
Input on voltage Ｉ Ｏ ） Ｖ
Ｖ （ Ｎ （ ）
-10
DC forward current gain
hFE
1000
DC forward current gain-Collector current
100
-1
10
-0.1
-1
-10
C
ollector current ＩＣ（�½�
Ａ）
Collector current Ｃ μ ）
Ｉ （ Ａ
-1000
C
ollector current-Input off voltage
-100
1
-1
-10
C
ollector current ＩＣ（�½�
Ａ）
-100
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
Input off voltage
ＶＩ（ＯＦＦ）（Ｖ）
-2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
