MITSUBISHI Semiconductor
〈Transistor〉
ＲＴ１Ｐ４３１Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
UNIT
RT1P431U
RT1P431M
RT1P431C
RT1P431S
Ｖ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
-50
-10
V
V
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
-50
V
ＣＥＯ
Ｉ
-100
-200
200
mA
mA
ꢀＣ
Ｉ
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
ꢀＣＭ
Ｐ
150
+150
450
mW
Ｃ
Ｔｊ
+150
℃
℃
Ｔｓｔｇ
Storage temperature
-55～+150
-55～+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
MAX
-0.1
Ｖ
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
I =-100μA，RBE=∞
ꢀC
-50
V
μA
－
V
（ＢＲ）ＣＥＯ
Ｉ
VCB=-50V，I =0
ꢀE
ꢀＣＢＯ
ｈ
VCE=-5V，I =-10mA
ꢀC
20
ＦＥ
Ｖ
I =-10mA，I =-0.5mA
ꢀB
-0.1
-1.4
-1.1
4.7
-0.3
-2.3
ＣＥ（ｓａｔ）
ꢀC
Ｖ
VCE=-0.2V，I =-5mA
ꢀC
V
Ｉ（ＯＮ）
Ｖ
Input off voltage
VCE=-5V，I =-100μA
ꢀC
-0.8
3.3
V
Ｉ（ＯＦＦ）
Ｒ
Input resistance
6.1
1.2
kΩ
１
Ｒ／Ｒ
２
Resistance ratio
0.8
1.0
１
ｆ
Ｔ
Gain band width product
VCE=-6V，I =10mA
ꢀE
150
MHz
TYPICAL CHARACTERISTICS
INPUT O N VO LTAG E
VS.C O LLEC TO R C URRENT
D C FO RW ARD C U RREN T G AIN
VS.C O LLEC TO R C URRENT
-10
1000
100
10
VCE=-0.2V
VCE=-5V
-1
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENTꢀＩ （ｍＡ）
Ｃ
COLLECTOR CURRENTꢀＩ（ｍＡ）
Ｃ
C O LLEC TO R C URRENT
VS.INPUT O FF VO LTAG E
-1000
VCE=-5V
-100
-10
0
-0.4
-0.8
-1.2
-1.6
（Ｖ）
-2
INPUT OFF VOLTAGEꢀＶ
Ｉ（ＯＦＦ）
ISAHAYAꢀELECTRONICSꢀCORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
