Ｒ １ ３ Ｘ SERIES
Ｔ P４ ０
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P430U
RATING
RT1P430M
RT1P430C
-50
-6
-50
-100
-200
200
+150
-55∼+150
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P430S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
Input on voltage-Collector CUrrent
-10
1000
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
=10mA
MIN
-50
100
3.3
MAX
-0.1
-0.3
6.1
UNIT
V
μA
−
V
kΩ
MHz
4.7
150
DC forward current gain -Collector CUrrent
V
CE
=-0.2V
DC forward current gain hFE
Input on voltage VI(ON) (V)
V
CE
=-5V
-1
100
-0.1
-0.1
-1
-10
Collector CUrrent (mA)
Ic
-100
10
-0.1
-1
-10
Collector CUrrent
Ic(mA)
-100
Collector Current-Input off voltage
-1000
V
CE
=-5V
Collector CUrrent Ic (uA)
-100
-10
-0
-0.2 -0.4
-0.6 -0.8 -1 -1.2 -1.4
Input off voltage
VI(OFF) (V)
-1.6 -1.8
-2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
