Ｒ １ ４ Ｘ SERIES
Ｔ P２ ０
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P240U
RATING
RT1P240M
RT1P240C
-50
-6
-50
-100
-200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P240S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
Input on voltage - collector voltage
-10
1000
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
=10mA
DC forward current gain-collector voltage
MIN
-50
100
15
MAX
-0.1
-0.3
29
UNIT
V
μA
−
V
kΩ
MHz
22
150
V
CE
=-0.2V
DC forward current gain
hFE
Input on voltage
VI(ON) (V)
V
CE
=-5V
-1
100
-0.1
-0.1
-1
-10
-100
10
-0.1
-1
-10
-100
collector voltage (mA)
Ic
collector voltage
Ic(mA)
collector voltage-Input off voltage
-1000
V
CE
=-5V
collector voltage (uA)
Ic
-100
-10
-0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4 -1.6 -1.8
-2
Input off voltage
VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
