ＲＴ１Ｐ２３７Ｘ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
RT1P237Ｔ
RT1P237U
RATING
RT1P237M
-50
-6
-50
-100
-200
RT1P237C
RT1P237S
UNIT
V
V
V
mA
mA
mW
℃
℃
Junction temperature
Storage temperature
125（※）
+125
-55�½�+125
150
200
+150
-55�½�+150
450
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-10mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
80
-0.7
-0.6
2.2
22
150
-0.3
-1.1
2.9
26
LIMIT
TYP
MAX
-0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
-0.5
1.5
17
V
CE
=-6V，I
E
=10mA
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T G A IN
V S. C OL L EC TOR C U R R EN T
-10
DC FORWARD CURRENT GAIN �½�
ＦＥ
INPUT ON VOLTEGE Ｖ
I(ON)
（Ｖ）
1000
V
CE
=-0.2V
V
CE
=-5V
-1
100
-0.1
-1
-10
-100
COLLECTOR CURRENT Ｉ
Ｃ
（�½�Ａ）
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
-1
-10
-100
COLLECTOR CURRENT Ｉ
Ｃ
（�½�Ａ）
-1000
COLLECTOR CURRENT Ｉ
Ｃ
（μＡ）
V
CE
=-5V
-100
-10
0
-0.4
-0.8
-1.2
-1.6
INPUT OFF VOLTAGE Ｖ
Ｉ（ＯＦＦ）
（Ｖ）
-2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
