ＲＴ１P１５０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RATING
UNIT
RT1P150U
RT1P150M
RT1P150C
RT1P150S
Collector to Base voltage
-50
V
Emitter to Base voltage
-6
V
Collector to Emitter voltage
-50
V
Collector current
-100
mA
Peak Collector current
-200
mA
Collector dissipation(Ta=25℃)
150 200 450
mW
Junction temperature
+150
+150
℃
Storage temperature
-55�½�+150
-55�½�+150
℃
PARAMETER
LIMIT
TYP
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-1mA，I
B
=-0.1mA
V
CE
=-6V，I
E
MIN
-50
100
MAX
-0.1
-0.3
UNIT
V
μA
－
V
kΩ
MHz
=10mA
100
150
DC forward current gain-Collector current
1000
VCE=-5V
Collector current-Input off voltage
-1000
VCE=-5V
DC forward current gain hFE
Collector current IC[uA]
100
-100
10
-1
-10
Collector current IC[mA]
-100
-10
-0
-0.5
-1
-1.5
-2
Input off voltage VI(OFF)[V]
Input on voltage-Collector current
-10
VCE=-200mV
Input on voltage VI(ON)[V]
-1
-0.1
-0.1
-1
-10
-100
Collector current IC[mA]
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
