RT1P14BX SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T�½�
T�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P14BU
RATING
RT1P14BM
RT1P14BC
-50
-6
-50
-100
-200
200
+150
-55�½�+150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P14BS
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55�½�+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CEO
I
CBO
�½�
FE
V
CE(�½��½��½�)
R
2
�½�
T
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I
C
=-100μA,R
BE
=∞
V
CB
=-50V,I
E
=0
V
CE
=-5V,I
C
=-5mA
I
C
=-10mA,I
B
=-0.5mA
V
CE
=-6V,I
E
MIN
-50
30
7
MAX
-0.1
-0.3
13
UNIT
V
μA
-
V
kΩ
MHz
=10mA
10
150
TYPICAL CHARACTERISTICS
DC forward current gain-Collector current
1000
VCE=-5V
Collector current-Input off voltage
-1000
VCE=-5V
DC forward current gain hFE
100
Collector current IC[uA]
-1
-10
Collector current IC[mA]
-100
-100
10
-10
-0
-0.5
-1
-1.5
-2
Input off voltage VI(OFF)[V]
Input on voltage-Collector current
-10
VCE=-200mV
Input on voltage VI(ON)[V]
-1
-0.1
-0.1
-1
-10
-100
Collector current IC[mA]
ISAHAYA ELECTRONICS CORPORATION