ＲＴ１Ｐ１４１Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P141T
RT1P141U
RATING
RT1P141M
-50
-10
-50
-100
-200
150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P141C
RT1P141S
UNIT
V
V
V
mA
mA
125（※）
+125
-55�½�+125
125
450
+150
-55�½�+150
LIMIT
TYP
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-10mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
50
MAX
-0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
-0.8
7.0
0.9
V
CE
=-6V，I
E
=10mA
-0.1
-1.5
-1.1
10
1.0
150
-0.3
-3.0
13
1.1
TYPICAL CHARACTERISTICS
Input On Voltage - Collector Current
-10
Input On Voltage ＶＩ（ＯＮ）
（Ｖ）
DC Forward Gain �½�ＦＥ
DC Forward Gain - Collector Current
1000
100
-1
10
-0.1
-1
-10
Collector Current Ｉ Ｃ （ �½�Ａ ）
-100
1
-1
-10
Collector Current Ｉ Ｃ （ �½�Ａ ）
-100
Collector Current - Input Off Voltage
-1000
Collector Current ＩＣ（μＡ）
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
-2
Input Off Voltage Ｖ Ｉ （ Ｏ Ｆ Ｆ ） （ Ｖ ）
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
