ＲＴ１P１４０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RATING
RT1P140T
RT1P140U
RT1P140M
RT1P140C
RT1P140S
-50
-6
-50
-100
-200
125（※）
150 200 450
+125
+150
-55�½�+125
-55�½�+150
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
UNIT
V
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
MIN
-50
100
7
LIMIT
TYP
MAX
-0.1
-0.3
13
UNIT
V
μA
－
V
kΩ
MHz
=10mA
10
150
TYPICAL CHARACTERISTICS
Input on voltage - Collectorcurrent
1000
DC forward current gain - Collector current
-10
V
CE
=-0.2V
Input on voltage VI(ON) (V)
DC forward current gain hFE
V
CE
=-5V
-1
100
-0.1
-0.1
-1
-10
Collector current Ic (mA)
-100
10
-0.1
-1
-10
Collector current Ic(mA)
-100
Collector voltage - Input off voltage
-1000
V
CE
=-5V
Collector current Ic (uA)
-100
-10
-0
-0.2
-0.4
-0.6 -0.8 -1 -1.2 -1.4
Input off voltage VI(OFF) (V)
-1.6
-1.8
-2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
