Ｒ １ ３ Ｘ SERIES
Ｔ P１ ０
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RATING
RT1P130U
RT1P130M
RT1P130C
RT1P130S
-50
-6
-50
-100
-200
150 200 450
+150
+150
-55∼+150
-55∼+150
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
Ｃ Ｏ
Ｂ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （�½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
=10mA
MIN
-50
100
0.7
1.0
150
-0.3
1.3
MAX
-0.1
UNIT
V
μA
−
V
kΩ
MHz
ISAHAYA
ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
