ＲＴ１Ｎ４３０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N430T
RT1N430U
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
125
（※ ）
+125
-55�½�+125
150
RATING
RT1N430M RT1N430C
50
6
50
100
200
200
+150
-55�½�+150
RT1N430S
UNIT
450
V
V
V
mA
mA
mW
℃
℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=1mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
100
3.3
LIMIT
TYP
MAX
0.1
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
0.1
4.7
200
0.3
6.1
TYPICAL CHARACTERISTICS
Input on voltage - Collector current
10
DC forward gain current - Collector current
1000
V
CE
=0.2V
Input on voltage VI(ON) (V)
DC forward gain current hFE
V
CE
=5V
1
100
0.1
0.1
1
10
Collector current Ic (mA)
100
10
0.1
1
10
Collector current Ic(mA)
100
Collector current -Input off voltage
1000
V
CE
=5V
Collector current Ic (uA)
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Input off voltage VI(OFF) (V)
1.6
1.8
2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
