〈Transistor〉
ＲＴ１Ｎ２５０Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
UNIT
RT1N250U
RT1N250M
RT1N250C
RT1N250S
Ｖ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
50
6
V
V
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
50
V
ＣＥＯ
Ｉ
100
200
200
mA
mA
ꢀＣ
Ｉ
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
ꢀＣＭ
Ｐ
150
+150
450
mW
Ｃ
Ｔｊ
+150
℃
℃
Ｔｓｔｇ
Storage temperature
-55～+150
-55～+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
MAX
0.1
Ｖ
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
I =100μA，RBE=∞
ꢀC
50
V
（ＢＲ）ＣＥＯ
Ｉ
VCB=50V，I =0
ꢀE
μA
－
ꢀＣＢＯ
ｈ
VCE=5V，I =1mA
ꢀC
100
ＦＥ
Ｖ
I =0.5mA，I =0.05mA
ꢀB
0.3
V
ＣＥ（ｓａｔ）
ꢀC
Ｒ
200
200
kΩ
MHz
１
ｆ
Ｔ
Gain band width product
VCE=6V，I =-10mA
ꢀE
ISAHAYAꢀELECTRONICSꢀCORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
