ＲＴ１Ｎ１５ＢＸ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N15BU
RATING
RT1N15BM
RT1N15BC
50
6
50
100
200
200
+150
-55�½�+150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N15BS
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55�½�+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
2
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=5mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
82
MAX
0.1
0.3
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
100
200
Input on voltage -Collector current
10
1000
DC forward current gain-Collector current
DC forward current gain hFE
Input on voltage VI(ON)(V)
VCE=0.2V
VCE=5V
100
1
10
0.1
0.1
1
10
100
Collector current IC(mA)
1
0.1
1
10
100
Collector current IC(mA)
Collector current -Input off voltage
100
Collector current IC(mA)
VCE=5V
10
1
0.1
0.1
1
Input on voltage VI(OFF)(V)
10
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
