ＲＴ１Ｎ１４ＢＸ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N14BU
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
150
+150
-55�½�+150
RATING
UNIT
RT1N14BM
RT1N14BC
RT1N14BS
50
V
6
V
50
V
100
mA
200
mA
200
450 mW
+150
℃
-55�½�+150
℃
LIMIT
TYP
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
2
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=5mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
30
7
MAX
0.1
0.3
13
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
10
200
TYPICAL CHARACTERISTICS
DC forward current gain-Collector current
1000
VCE=5V
Collector current-Input off voltage
1000
VCE=5V
DC forward current gain hFE
100
Collector current IC[uA]
1
10
Collector current IC[mA]
100
100
10
10
0
0.5
1
Input off voltage VI(OFF)[V]
1.5
2
Input on voltage-Collector current
10
VCE=200mV
Input on voltage VI(ON)[V]
1
0.1
0.1
1
10
100
Collector current IC[mA]
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
