ＲＴ１Ｎ１４０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N140T
RT1N140U
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
125
（※ ）
+125
-55�½�+125
1
50
RATING
RT1N140M RT1N140C
50
6
50
100
200
200
+150
-55�½�+150
RT1N140S
UNIT
450
V
V
V
mA
mA
mW
℃
℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=1mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
100
7
LIMIT
TYP
MAX
0.1
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
0.1
10
200
0.3
13
TYPICAL CHARACTERISTICS
IInput On Voltage -Collector Current
10
Input On Voltage VI(ON) (V)
1000
DC Forward Current Gain
- Collector Current
V
CE
=0.2V
DC Forward Current Gain hFE
V
CE
=5V
1
100
0.1
0.1
1
10
100
Collector Current Ic (mA)
10
0.1
1
10
100
Collector Current Ic(mA)
Collector Current - Input Off Voltage
1000
Collector Current Ic (uA)
V
CE
=5V
100
10
0
0.2
0.4
0.6
0.8
1
1.2
Input Off Voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
