PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISC6046AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE
200
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
1000
DC FORWARD CURRENT GAIN hFE
COLLECTOR DISSIPATION
Pc(mW)
COLLECTOR DISSIPATION Pc(mW)
Ta=25℃
VCE=10V
150
100
100
VCE=1V
50
0
0
50
100
150
10
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
COLLECTOR TO EMITTER VOLTAGE VS.
BASE CURRENT
1000
AMBIENT TEMPERATURE Ta(℃)
AMBIENT TEMPERATURE Ta(℃)
COMMON EMITTER OUTPUT
0.25
COLLECTOR CURRENT Ic(A)
2.0
IB=1.0mA
IB=0.9mA
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
COLLECTOR TO EMITTER VOLTAGE
VCE(V)
Ta=25℃
Ta=25℃
1.6
IC=1mA
IC=10mA
IC=100mA
IC=600mA
IB=0.8mA
IB=0.7mA
IB=0.6mA
IB=0.5mA
IB=0.4mA
IB=0.3mA
IB=0.2mA
IB=0.1mA
1.2
0.8
0.4
0.0
0.001
10
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE VCE(V)
C TO E SATURATION VOLTAGE VS.
COLLECTOR CURRENT
BASE CURRENT IB(mA)
B TO E SATURATION VOLTAGE VS.
COLLECTOR CURRENT
10
C TO E SATURATION VOLTAGE
VCE(sat)(mV)
B TO E SATURATION VOLTAGE
VBE(sat)(V)
Ta=25℃
IC/IB=10
10
Ta=25℃
IC/IB=10
1
1
0.1
0.01
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT Ic(A)
COLLECTOR CURRENT Ic(A)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
