〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC4356AS1 is a silicon NPN epitaxial type transistor
designed relay drive application.
7.5MAX
1.0
1.0
0.1
0.45
2.5
2.5
①
②
③
3.0
OUTLINE DRAWING
4.0
Unit：½½
FEATURE
●High voltage.
V
CEo
=60V
13.0MIN
14.0
●High collector current. I
C
=2A
●Low V
CE
(sat) V
CE
(sat)=0.5V max (@I
C
=1A, I
B
=50mA)
●High collector dissipation. P
C
=600mW
APPLICATION
Audio machine, VCR, relay drive.
2.5
JEITA：
JEDEC：
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
60
6
60
2
3
600
+150
-55½+150
Unit
V
V
V
A
A
mW
℃
℃
.
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Cob
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
Test conditions
I
C
= 10μA , I
E
=0mA
I
E
= 10μA , I
C
=0mA
I
C
= 2mA , R
BE
= ∞
V
CB
= 50V , I
E
= 0mA
V
EB
= 4V , I
C
= 0mA
V
CE
= 4V , I
C
= 100mA
I
C
=1A , I
B
= 50mA
V
CE
= 10V , I
E
= -10mA
V
CB
= 10V , I
E
= 0mA,f=1MHz
Limits
Min
60
6
60
-
-
55
-
-
-
Typ
-
-
-
-
-
-
0.2
80
18
Max
-
-
-
0.2
0.2
300
0.5
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
※） It shows hFE classification in right table.
Item
hFE item
C
55½110
D
90½180
E
150½300
ISAHAYA ELECTRONICS CORPORATION
0.4
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
