〈SMALL-SIGNAL TRANSISTOR〉
ISC3581AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC3581AS1 is a silicon NPN epitaxial type transistor
designed for high collector current application.
Complementary with ISA1399AS1.
3.0
4.0
OUTLINE DRAWING
Unit：½½
FEATURE
13.0MIN
1.0
●High gain band width product. fT=150MHz typ
●High V
CEO
. V
CEO
=50V
●Excellent linearity of DC forward current gain.
14.0
1.0
●High collector current.
I
CM
=600mA
0.1
0.45
2.5
2.5
2.5
APPLICATION
For switching, small type motor drive application.
①
②
③
JEITA：-
JEDEC：-
TERMINAL CONNECTER
①：EMITTER
.
②：COLLECTOR
③：BASE
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
55
4
50
400
600
600
+150
-55½+150
Unit
V
V
V
mA
mA
mW
℃
℃
MARKING
Type name
581
□□
F
Lot No
hFE ITEM
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Symbol
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I
C
= 10μA , I
E
=0mA
I
E
= 10μA , I
C
=0mA
I
C
= 100μA , R
BE
= ∞
V
V
V
CB
EB
0.4
Limits
Min
55
4
50
-
-
90
-
-
Typ
-
-
-
-
-
-
0.15
150
Max
-
-
-
1
1
500
0.5
-
7.5MAX
Unit
V
V
V
μA
μA
-
V
MHz
= 25V , I
E
= 0mA
= 4V , I
C
= 100mA
=2V , I
C
= 0mA
CE
I
C
=200mA , I
B
= 10mA
V
CE
=6V , I
E
= -10mA
※） It shows hFE classification in right table.
D
90½180
E
150½300
F
250½500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
