〈SMALL-SIGNAL TRANSISTOR〉
ISC3247AS1
FOR RELAY DRIVE, POWOR SUPPLY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC3247AS1 is a silicon NPN epitaxial type transistor.
Designed with high voltage, high collector current,
dissipation and high hFE.
3.0
OUTLINE DRAWING
4.0
Unit：½½
13.0MIN
FEATURE
●High hFE.
●High voltage.
hFE=600 to 1800
V
CEo
=50V
14.0
1.0
1.0
0.1
0.45
●Low collector to emitter saturation voltage.
V
CE
(sat)=0.15V (@I
C
=500mA, I
B
=10mA)
●High collector dissipation. P
C
=600mW
2.5
2.5
2.5
①
②
③
APPLICATION
Relay drive or power supply for audio machine, VCR, and
other electronic machine.
JEITA：
JEDEC：
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
.
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
6
50
1
2
600
+150
-55½+150
Unit
V
V
V
A
A
mW
℃
℃
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Cob
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
Test conditions
I
C
= 10μA , I
E
=0mA
I
E
= 10μA , I
C
=0mA
I
C
= 1mA , R
BE
= ∞
V
CB
= 40V , I
E
= 0mA
V
EB
=2V , I
C
= 0mA
V
CE
= 6V , I
C
= 0.1A
I
C
=500mA , I
B
= 10mA
V
CE
= 10V , I
E
= -10mA
V
CB
= 10V , I
E
= 0mA,f=1MHz
Limits
Min
50
6
50
-
-
600
-
-
-
Typ
-
-
-
-
-
-
0.15
130
12
Max
-
-
-
0.1
0.1
1800
0.5
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
※） It shows hFE classification in right table.
Item
hFE item
H
600½1200
J
900½1800
ISAHAYA ELECTRONICS CORPORATION
0.4
7.5MAX
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
