〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISB1035AS1 is a resin sealed silicon PNP epitaxial type
transistor. It is designed for low frequency power amplify
application.
Complementary with ISD1447AS1.
3.0
OUTLINE DRAWING
4.0
Unit：½½
FEATURE
●High collector current. I
CM
= 1.5A
●High gain band width product. fT= 100MHz typ
●High collecot dissipation. Pc= 600mW
●Excellent linearity of DC forward current gain.
14.0
13.0MIN
1.0
1.0
0.1
0.45
2.5
2.5
APPLICATION
Radio, tape recorder, small type stereo, etc.
Low frequency power amplify circuit with 2 to 3.5W output.
JEITA：
JEDEC：
2.5
①
②
③
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
.
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-30
-4
-25
-1
-1.5
600
+150
-55½+150
Unit
V
V
V
A
A
mW
℃
℃
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I
C
= -10μA , I
E
=0mA
I
E
= -10μA , I
C
=0mA
I
C
= -100μA , R
BE
= ∞
V
V
V
CB
EB
Limits
Min
-30
-4
-25
-
-
55
-
-
Typ
-
-
-
-
-
-
-
100
Max
-
-
-
-1
-1
300
-0.5
-
0.4
7.5MAX
Unit
V
V
V
μA
μA
-
V
MHz
C
D
90½180
E
150½300
= -25V , I
E
= 0mA
= -1V , I
C
= -500mA
= -2V , I
C
= 0mA
CE
I
C
= -500mA , I
B
= -25mA
V
CE
= -6V , I
E
= 10mA
※） It shows hFE classification in right table.
Item
hFE item
55½110
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
