〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
Collector dissipation－AMBIENT TEMPERTURE
-50
COMMON EMITTER OUTPUT
IB=-0.25mA
IB=-0.20mA
IB=-0.15mA
200
-40
Collector dissipation Pc (mW)
150
COLLECTOR CURRENT IC(mA)
IB=-0.10mA
-30
100
-20
IB=-0.05mA
50
-10
Ta=25℃
VCE=-6V
IB=-0mA
0
0
25
50
75
100
AMBIENT TEMPERTURE Ta (℃)
125
150
-0
-0
-2
-4
-6
-8
COLLECTOR TO EMITTER VOLTAGE VCE(V)
-10
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
10000
Ta=25℃
VCE=-6V
GAIN BAND WIDTH PRODUCT fT(MHz)
250
Ta=25℃
VCE=-6V
f=100MHz
DC FORWARD CURRENT GAIN hFE
200
1000
150
100
100
50
10
-0.1
0
-1
-10
COLLECTOR CURRENT IC(mA)
-100
1
10
EMITTER CURRENT IE(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COMMON EMITTER TRANSFER
-50
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ta=25℃
VCE=-6V
-40
COLLECTOR CURRENT IC(A)
100
Ta=25℃
IE=0
f=1MHz
10
-30
-20
1
-10
-0
0.0
0.2
0.4
0.6
0.8
1.0
BASE TO EMITTER VOLTAGE VBE(V)
0
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
