ISA2188AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2188AM1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low V
CE(sat).
OUTLINE DRAWING
2.1
0.425
1.25
0.425
Unit：mm
0.65
①
②
③
2.0
1.3
FEATURE
●High collector current
I
C（MAX）
=-650mA
●Low collector to emitter saturation voltage
V
CE（sat）
<-0.7V
max
0.9
0.65
0.7
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0½0.1
JEITA：SC-70
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CEO
V
CBO
V
EBO
I
CM
I
C
P
C
T
j
T
stg
Parameter
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Peak collector current
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-20
-25
-4
-1000
-650
200
150
-55½150
Unit
V
V
V
mA
mA
mW
℃
℃
MARKING
Type Name
hFE ITEM
・ AF
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
※
V
CE（sat）
f
T
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Test condition
IC=-100uA, IB=0
IC=-10uA, IE=0
IE=-10uA, IC=0
VCB=-25V, IE=0
VEB=-2V, IC=0
IC=-100mA, VCE=-4V
IC=-500mA, IB=-25mA
IE=10mA, VCE=-6V,f=100MHz
ITEM
hFE
Min
-20
-25
-4
Limits
Typ
0.15
0.3
Max
Unit
V
V
V
uA
uA
-
V
MHz
G
400½800
150
-0.3
210
E
150½300
-1
-1
800
-0.7
*：It shows hFE classification in below table.
F
250½500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
