〈SMALL-SIGNAL TRANSISTOR〉
ISA1993AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(FRAME TYPE)
DESCRIPTION
ISA1993AS1 is mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
3.0
.
4.0
OUTLINE DRAWING
Unit：�½��½�
14.0
1.0
1.0
0.1
0.45
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=max-0.3V（@Ic=-100mA、IB=-10mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
1.27 1.27
0.4
2.5
①
②
③
APPLICATION
small type machine low frequency voltage Amplify application.
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
MAXIMUM RATINGS
（Ta=25℃）
.
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-50
-6
-200
450
＋150
-55∼＋150
Unit
V
V
V
mA
mW
℃
℃
MARKING
A93
□□F
hFE アイテム
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
NoiseFigure
Symbol
V(
BR
)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
Test conditions
I
C
= -100μA , R
BE
= ∞
V
V
V
V
CB
EB
Limits
Min
-50
-
-
150
50
-
-
-
-
Typ
-
-
-
-
-
-
200
4.0
-
Max
-
-0.1
-0.1
500
-
-0.3
-
-
20
Unit
V
μA
μA
-
-
V
MHz
pF
dB
= -50V , I
E
= 0mA
= -6V , I
C
= -1mA
= -6V , I
C
= -0.1mA
= -6V , I
C
= 0mA
CE
CE
I
C
= -100mA , I
B
= -10mA
V
V
V
CE
= -6V , I
E
= 10mA
= -6V , I
E
= 0mA,f=1MHz
CB
CE
= -6V , I
E
= 0.3mA,f=100Hz,R
G
=10kΩ
※） It shows hFE classification in below table.
Item
hFE item
E
150∼300
F
250∼500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
