〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
50
IB=0.20mA
COMMON EMITTER TRANSFER
-50
IB=0.18mA
IB=0.16mA
IB=0.14mA
IB=0.12mA
IB=0.10mA
VCE=-6V
40
COLLECTOR CURRENT IC(mA)
-40
COLLECTOR CURRENT IC[mA]
5
30
IB=0.08mA
IB=0.06mA
-30
20
IB=0.04mA
10
-20
IB=0.02mA
-10
IB=0
0
0
1
2
3
4
COLLECTOR・EMITTER VOLTAGE VCE(V)
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE[V]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
1000
DC FORWARD CURRENT GAIN hFE
GAIN BAND WIDTH PRODUCT fT[MHz]
400
VCE=-6V
100(@IC--1mA)
VCE=-6V
300
100
200
100
10
-0.1
0
-1
-10
-100
-1000
0.1
1
10
100
COLLECTOR CURRENT IC[mA]
EMITTER CURRENT IE[mA]
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
250
COLLECTOR DISSIPATION Pc[mW]
200
10
150
100
1
50
0
-0.1
0
-1
-10
-100
0
50
100
150
COLLECTOR TO BASE VOLTAGE VCB[V]
AMBIENT TEMPERATURE Ta[℃]
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
