〈SMALL-SIGNAL TRANSISTOR〉
ISA1399AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1399AS1 is a silicon PNP epitaxial type transistor
designed with High collector current, high voltage.
OUTLINE DRAWING
4.0
Unit：½½
Complementary with ISA3581AS1.
FEATURE
●High collector current. I
CM
=600mA
13.0MIN
1.0
7.5MAX
1.0
0.1
0.45
2.5
2.5
①
②
③
3.0
●High gain band width product. fT=150MHz typ
●High V
CEO
. V
CEO
=-50V
●Excellent linearity of DC forward current gain.
14.0
APPLICATION
2.5
For switching, small type motor drive application.
JEITA：
JEDEC：
.
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
Ratings
-55
-4
-50
-400
-600
600
＋150
-55½＋150
Unit
V
V
V
mA
mA
mW
℃
℃
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I
C
= -10μA , I
E
= 0
I
E
= -10μA , I
C
= 0
I
C
= -100μA , R
BE
= ∞
V
V
V
CB
EB
CE
Limits
Min
-55
-4
-50
-
-
90
-
-
Typ
-
-
-
-
-
-
-0.17
150
Max
-
-
-
-1
-1
500
-0.5
-
0.4
Unit
V
V
V
μA
μA
-
V
MHz
= -25V , I
E
= 0mA
= -2V , I
C
= 0mA
= -4V , I
C
= -100mA
I
C
= -200mA , I
B
= -10mA
V
CE
= -6V , I
E
= 10mA
※） It shows hFE classification in right table.
Item
hFE item
D
90½180
E
150½300
F
250½500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
