〈SMALL-SIGNAL TRANSISTOR〉
ISA1284AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1284AS1 is a silicon PNP epitaxial type transistor
designed for high voltage application.
Complementary with ISC3244AS1.
3.0
4.0
OUTLINE DRAWING
Unit：½½
FEATURE
●High voltage V
CEO
=-100V
13.0MIN
1.0
●High peak collector current.
I
CM
=-800mA
14.0
1.0
0.1
0.45
●High gain band width product. fT=130MHz (typ)
●High collector dissipation. P
C
=600mW
2.5
2.5
APPLICATION
2.5
For
20½40W
amp complementary drive, relay drive, power supply
application.
①
②
③
JEITA：
JEDEC：
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-100
-5
-100
-500
-800
600
+150
-55½+150
Unit
V
V
V
mA
mA
mW
℃
℃
.
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Cob
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
Test conditions
I
C
= -10μA , I
E
=0mA
I
E
= -10μA , I
C
=0mA
I
C
= -1mA , R
BE
= ∞
V
V
V
CB
EB
Limits
Min
-100
-5
-100
-
-
55
-
-
-
Typ
-
-
-
-
-
-
-0.15
130
11
Max
-
-
-
-0.5
-0.5
300
-0.5
-
-
0.4
7.5MAX
Unit
V
V
V
μA
μA
-
V
MHz
pF
D
90½180
E
150½300
= -50V , I
E
= 0mA
= -10V , I
C
= -10mA
= -2V , I
C
= 0mA
CE
I
C
= -150mA , I
B
= -15mA
V
V
CE
= -10V , I
E
= 10mA
= -10V , I
E
= 0mA,f=1MHz
Item
hFE item
C
50½110
CB
※） It shows hFE classification in right table.
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
