TYPICAL CHARACTERISTICS
Ta=25℃
100
2.7V
2.6V
2.5V
2.4V
ID -VDS
1
Ta=25℃
1.9V
ID -VDS(Low voltage region)
1.85V
1.8V
80
Drain Current ID (mA)
60
VGS=2.2V
Drain current ID (mA)
2.3V
0.8
0.6
1.75V
40
2.1V
0.4
1.7V
20
2.0V
1.9V
0.2
1.65V
VGS=1.6V
1.5V
0
0
5
Drain-Source voltage VDS (V)
1.8V
0
10
0
0.1
0.2
0.3
0.4
Drain-Source voltage VDS (V)
0.5
IDR -VDS
100
Drain Reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
1000
Ta=25℃
VDS=10V
100
ID -VGS
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
Drain-Source on-stage resistance RDS(on)
(Ω)
RDS(on) - ID
5
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=10V
100
Ta=25℃
4
3
2
VGS=4V
10V
10
1
1
1
10
100
1000
Drain current ID (mA)
0
0
50
100
Drain current ID (mA)
150
200
t - ID
10000
Ta=25℃
toff
C - VDS
100
Switching time t (ns)
1000
Ciss
Capacitance C (pF)
tf
10
Coss
100
ton
1
10
tr
Ta=25℃
VGS=0V
1
0.1
1
10
Drain current ID (mA)
100
0.1
0.1
1
10
Drain-Source voltage VDS (V)
100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
