TYPICAL CHARACTERISTICS
ID -VDS
ID -VDS(Low voltage region)
1.75V
1.8V
Ta=25℃
Ta=25℃
2.8V
2.7V
100
80
60
40
20
0
1
0.8
0.6
0.4
0.2
0
2.6V
2.5V
1.7V
2.4V
2.3V
1.65V
VGS=2.2V
2.1V
2.0V
1.6V
1.55V
VGS=1.5V
1.4V
1.9V
1.7V
0
5
10
0
0.1
0.2
0.3
0.4
0.5
Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
IDR -VDS
ID -VGS
100
10
1
1000
100
10
Ta=25℃
VGS=0V
Ta=25℃
VDS=10V
1
-0
-0.5
-1
-1.5
-2
0
1
2
3
4
5
Drain-Source voltage VDS (V)
Gate-Source voltage VGS (V)
|Yfs| - ID
RDS(on) - ID
1000
100
10
Ta=25℃
VDS=10V
10
8
Ta=25℃
6
VGS=4V
10V
4
2
0
0
1
50
100
150
200
1
10
100
1000
Drain currentꢀID (mA)
Drain current ID (mA)
C - VDS
t - ID
10000
1000
100
10
100
10
1
Ta=25℃
toff
tf
Ciss
Coss
ton
tr
Ta=25℃
VGS=0V
1
0.1
0.1
1
10
100
0.1
1
10
100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION