ＩＮＫ0010AＸ SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING（Ｔａ＝２５℃）
RATING
INK0010AU1 INK0010AM1
SYMBOL
PARAMETER
UNIT
INK0010AT2
125（※）
INK0010AC1
ＶDSS
ＶGSS
Drain-source voltage
Gate-source voltage
Drain current
60
V
V
±20
100
Ｉ
mA
D
Total
power
dissipation
ＰＤ
150
200
mW
（Ta=25℃）
Ｔch
Channel temperature
+125
+150
℃
℃
Ｔｓｔｇ
Range of Storage temperature
-55～+125
-55～+150
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
60
-
TYP
-
MAX
Drain-source breakdown voltage I D=100μA, V GS=0V
-
±1.0
1.0
2.0
-
V
μA
μA
V
V
(BR)DSS
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
V GS=±15V, VDS=0V
DS=60V ,VGS=0V
-
I
GSS
DSS
V
-
-
I
I D=250μA, V DS= V GS
V DS=10V, I D=100mA
I D=100mA, V GS=4.0V
I D=100mA, V GS=10.0V
1.0
-
-
V
th
Forward transfer admittance
200
4.0
3.0
20
5.0
27
58
mS
| Yfs
|
-
-
Static drain-source on-state
resistance
Ω
RDS(on)
-
-
-
-
pF
pF
Input capacitance
V DS=10V, V GS=0V,f=1MHz
V DS=10V, V GS=0V,f=1MHz
Ciss
-
-
Output capacitance
Coss
-
-
t
ON
V DD=5V , I D=10mA
V GS=0～5V
Switching time
ns
-
-
t
OFF
Switching time test condition
test circuit
OUT
5V
90%
IN
5V
input
waveform
RL
10%
50Ω
0V
0
V
DD
10μs
V
DD
10%
V
DD=5V
output
waveform
D.U.≦1%
Common source
Ta=25℃
90%
tr
V
DS(ON）
tf
toff
ton
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
