TYPICAL CHARACTERISTICS
Ta=25℃
100
1.6V
1.5V
1.4V
ID -VDS
Ta=25℃
1
1.0V
ID -VDS(Low voltage region)
80
Drain current ID (mA)
Drain current ID (mA)
0.8
60
1.3V
0.6
0.95V
40
1.2V
0.4
0.9V
20
1.1V
VGS=1.0V
0.2
0.85V
VGS=0.8V
0
0
2
4
6
Drain-Source voltage VDS (V)
0
10
0
0.1
0.2
0.3
Drain-Source voltage VDS (V)
8
0.4
0.5
IDR -VDS
100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
100
1000
Ta=25℃
VDS=10V
ID -VGS
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=10V
Drain-Source ON voltage
VDS(ON) (mV)
100
100
1000
Ta=25℃
VGS=4V
VDS(ON) -ID
10
10
1
1
1
10
100
1000
Drain current ID (mA)
0.1
1
10
Drain current ID (mA)
100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
Capacitance C (pF)
1000
100
C - VDS
Ciss
t�½�
100
10
Coss
10
ton
tr
Ta=25℃
VGS=0V
1
0.1
1
10
100
1
0.1
1
10
100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
