INK0001AX SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING(T�½�=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
Tch
T�½��½��½�
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total
power
dissipation
(Ta=25℃)
Channel temperature
Range of Storage temperature
INK0001AT2
RATING
INK0001AU1
INK0001AM1
50
±8
100
150
+150
-55�½�+150
200
INK0001AC1
UNIT
V
V
mA
mW
℃
℃
125(※)
+125
-55�½�+125
ELECTRICAL CHARACTERISTICS(T�½�=25℃)
SYMBOL
PARAMETER
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
Output capacitance
Switching time
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
D
=100μA, V
V
V
V
GS
DS
GS
V
(BR)DSS
I
GSS
I
DSS
V
th
|
Y
fs
|
R
DS(ON)
C
iss
C
oss
t
ON
t
OFF
=0V
MIN
50
-
-
0.6
-
-
-
-
-
-
LIMIT
TYP
-
-
-
-
250
3.5
24
5
11
50
MAX
-
±0.5
50
1.2
-
-
-
-
-
-
UNIT
V
μA
μA
V
mS
Ω
pF
pF
ns
=±5V, V
DS
=0V
=V
=50V ,V
GS
=0V
DS
GS
I
D
=250μA, V
DS
=10V, I
D
=0.1A
GS
I
D
=100mA, V
V
V
V
V
DS
DS
=4.0V
=10V, V
=10V, V
GS
GS
=0V,f=1MHz
=0V,f=1MHz
=5V , I
D
=10mA
GS
=0�½�5V
DD
Switching time test condition
test circuit
5V
IN
OUT
5V
90%
R
L
0
10μs
V
DD
=5V
D.U.≦1%
Common source
Ta=25℃
50Ω
V
DD
input
waveform
0V
V
DD
10%
10%
output
waveform
V
DS(ON)
ton
90%
tr
toff
tf
ISAHAYA ELECTRONICS CORPORATION