TYPICAL CHARACTERISTICS
Ta=25℃
-100
-3.0V
-2.9V
ID -VDS
-1
-2.7V
Ta=25℃
-2.8V
-1.7V
IID -VDS(Low voltage region)
-1.65V
-80
Drain Current ID (mA)
-2.6V
-2.5V
-0.8
Drain current ID (mA)
-1.6V
-60
-2.4V
-2.3V
VGS=-2.2V
-2.1V
-0.6
-40
-0.4
-1.55V
-20
-2.0V
-1.9V
-1.7V
-0.2
VGS=-1.5V
-1.45V
-0
-0
-5
Drain-Source voltage VDS (V)
-0
-10
-0
-0.1
-0.2
-0.3
-0.4
Drain-Source voltage VDS (V)
-1.4V
-0.5
IDR -VDS
-100
Drain Reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
-1000
Ta=25℃
VDS=-10V
-100
ID -VGS
-10
-10
-1
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
-1
-0
-1
-2
-3
-4
-5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Drain-Source on-state resistance
RDS(on) (Ω)
Ta=25℃
VDS=-10V
Forward transfer admittance
|Yfs| (mS)
10
Ta=25℃
8
6
4
2
0
1
-1
-10
-100
-1000
Drain current ID (mA)
-0
-50
RDS(ON) - ID
VGS=-4V
100
-10V
10
-100
Drain current ID (mA)
-150
-200
t - ID
10000
Ta=25℃
toff
C - VDS
100
Switching time t (ns)
1000
Ciss
Capacitance C (pF)
tf
10
Coss
100
ton
10
tr
1
Ta=25℃
VGS=0V
1
-0.1
-1
-10
-100
0.1
-0.1
-1
-10
Drain-Source voltage VDS (V)
-100
Drain current ID (mA)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
