TYPICAL CHARACTERISTICS
Ta=25℃
-100
-1.9V
Drain current ID (mA)
-80
-1.8V
Drain current ID (mA)
-1.7V
-1.6V
-1.5V
-1.4V
-20
VGS=-1.3V
-0.8
ID -VDS
-1
-1.0V
-0.95V
-0.9V
-0.85V
Ta=25℃
ID -VDS(Low voltage region)
-60
-40
-0.6
VGS=-0.8V
-0.4
-0.2
-0
-0
-2
-4
-6
-8
-10
Drain-Source voltage VDS (V)
-0
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
IDR -VDS
-100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
ID -VGS
-1000
Ta=25℃
VDS=-10V
Drain current ID (mA)
0
0.5
1
1.5
2
-100
-10
-10
-1
Drain-Source voltage VDS (V)
-1
-0
-1
-2
-3
-4
Gate-Source voltage VGS (V)
-5
|Yfs| - ID
1000
Ta=25℃
VDS=-10V
Forward transfer admittance
|Yfs| (mS)
Drain-Source ON voltage
VDS(ON) (mV)
-1000
Ta=25℃
VGS=-4V
VDS(ON) -ID
100
-100
10
-10
1
-1
-10
-100
-1000
Drain current ID (mA)
-1
-1
-10
Drain current ID (mA)
C - VDS
100
Ciss
-100
t - ID
10000
toff
1000
tf
Capacitance C (pF)
Ta=25℃
Switching time t (ns)
100
ton
10
tr
1
-0.1
10
Coss
Ta=25℃
VGS=0V
1
-0.1
-1
-10
-100
-1
-10
Drain current ID (mA)
-100
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION