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INJ0001AT2 参数 Datasheet PDF下载

INJ0001AT2图片预览
型号: INJ0001AT2
PDF下载: 下载PDF文件 查看货源
内容描述: 高速开关硅P沟道MOSFET [High speed switching Silicon P-channel MOSFET]
分类和应用: 开关
文件页数/大小: 4 页 / 132 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号INJ0001AT2的Datasheet PDF文件第1页浏览型号INJ0001AT2的Datasheet PDF文件第2页浏览型号INJ0001AT2的Datasheet PDF文件第4页  
TYPICAL CHARACTERISTICS
Ta=25℃
ID -VDS
-10
-1.6V
Ta=25℃
ID -VDS(Low voltage region)
-100
-80
Drain current ID (mA)
-1.5V
-8
Drain current ID (mA)
-1.0V
-60
-1.4V
-6
-0.95V
-40
-1.3V
-1.2V
-4
VGS=-0.9V
-20
-1.1V
VGS=-1.0V
-2
-0.85V
-0.8V
-0
-0
-5
Drain-Source voltage VDS (V)
-10
-0
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
IDR -VDS
-100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
-1000
Ta=25℃
VDS=-10V
-100
ID -VGS
-10
-10
-1
0
0.5
1
1.5
Drain-Source voltage VDS (V)
2
-1
-0
-1
-2
-3
-4
Gate-Source voltage VGS (V)
-5
|Yfs| - ID
1000
Forward transfet admittance |Yfs| (mS)
Ta=25℃
VDS=-10V
100
Drain-Source ON voltage
VDS(ON)(mV)
-100
-1000
Ta=25℃
VGS=-4V
VDS(ON) - ID
10
-10
1
-1
-10
-100
Drain current ID (mA)
-1000
-1
-1
-10
Drain current ID (mA)
-100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
1000
C - VDS
100
Capacitance C (pF)
tf
Ciss
100
10
10
ton
tr
Ta=25℃
VGS=0V
Coss
1
-0.1
-1
-10
Drain current ID (mA)
-100
1
-0.1
-1
-10
Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION