TYPICAL CHARACTERISTICS
Ta=25℃
-100
-1.6V
-1.5V
-80
Drain current ID (mA)
ID -VDS
-1.4V
-1.3V
Drain current ID (mA)
-5
-1.0V
-4
-0.9V
-3
-0.85V
VGS=-0.8V
-0.95V
ID -VDS(Low voltage region)
Ta=25℃
-60
-1.2V
-40
-1.1V
VGS=-1.0V
-2
-20
-1
-0
-0
-2
-4
-6
-8
-10
Drain-Source voltage VDS (V)
-0
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
IDR -VDS
-100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
-100
-1000
Ta=25℃
VDS=-10V
ID -VGS
-10
-10
-1
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
-1
-0
-1
-2
-3
-4
-5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=-10V
100
-1000
Ta=25℃
VGS=-4V
Drain-Source ON voltage
VDS(ON) (mV)
VDS(ON) -ID
-100
10
-10
1
-1
-10
-100
-1000
Drain current ID (mA)
-1
-1
-10
Drain current ID (mA)
-100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
1000
tf
Capacitance C (pF)
100
C - VDS
Ciss
100
10
Coss
ton
10
tr
Ta=25℃
VGS=0V
1
-0.1
1
-0.1
-1
-10
Drain current ID (mA)
-100
-1
-10
Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION