TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INC6001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5
0.5
DESCRIPTION
INC6001AC1 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
Unit：�½��½�
0.95
2.9
1.90
FEATURE
●Super mini package for easy mounting
● Small collector to emitter saturation voltage
● High collector current
● High voltage
I
C
=1A
V
CE(sat)
=0.5V
①
②
③
V
CEO
=100V
1.1
0.16
0.8
0.95
APPLICATION
For DC/DC converter , power supply etc.
JEITA：SC-59
TERMINAL CONNECTER
①：BASE
Ratings
120
6
100
1
200
＋150
-55�½�＋150
Unit
V
V
V
A
mW
℃
℃
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
I
C
=10μA , I
E
=0
I
E
=10μA , I
C
=0
I
C
=1mA ,R
V
V
V
CB
EB
BE
0�½�0.1
Test conditions
0.4
Limits
Min
120
6
100
-
-
100
-
-
-
Typ
-
-
-
-
-
-
-
270
5
Max
-
-
-
500
500
300
0.5
-
-
V
MHz
pF
Unit
V
V
V
nA
nA
=∞
=120V, I
E
=0mA
=6V, I
C
=0mA
=2V, I
C
=150mA
=10V, I
E
=-50mA
=10V, I
E
=0mA,f=1MHz
CE
I
C
=500mA ,I
B
=50mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
