<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INC6008AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
INC6008AP1 is a silicon NPN transistor.
It is designed with high voltage.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：½½
1.5
・Small package for easy mounting.
・High collector current
Ic=1A
0.8 MIN
・High voltage V
CEO
= 140V
・Low voltage VCE(sat) = 0.7V(MAX)
E
C
0.53
MAX
B
4.2 MAX
FEATURE
2.5
0.4
0.48 MAX
1.5
APPLICATION
Relay drive, Power supply
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
E：EMITTER
Ｅ: エミッタ
Ｃ: コレクタ
C：COLLECTOR
B：BASE
Ｂ: ベース
JEDEC：―
JEITA:SC-62
EIAJ : SC-62
JEDEC:SOT-89
JEDEC :
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
160
5
140
1
500
＋150
-55½＋150
UNIT
V
V
V
A
mW
℃
MARKING
Type Name
B H
W
LOT №
h
FE
ITEM
LIMITS
TYP
-
-
-
-
-
-
10
-
-
-
-
UNIT
V
V
V
nA
nA
-
-
V
V
MHz
pF
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½ＦＥ1
½ＦＥ2
VCE(sat)
VBE(sat)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=100μA，I
E
=0mA
I
E
=100μA，I
C
=0mA
I
C
=10mA，R
BE
=∞
V
CB
=140V，I
E
=0mA
V
EB
=4V，I
C
=0mA
V
CE
=10V，I
C
=150mA
V
CE
=10V，I
C
=1A
I
C
=150mA，I
B
=15mA
I
C
=150mA，I
B
=15mA
V
CE
=10V，I
E
=-50mA
V
CB
=10V，I
E
=0mA，f=1MHz
MIN
160
5
140
-
-
100
-
-
-
100
-
MAX
-
-
-
100
100
300
-
0.7
1.1
-
15
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
