PRELIMINARY
Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INC6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN TRANSISTOR
DESCLIPTION
INC6002AC1 is a silicon NPN transistor.
It is designed with high voltage.
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit：mm
0.95
FEATURE
2.8
・Super mini package for easy mounting.
・Hige voltage V
CEO
=300V
1.9
(1)
(3)
0.95
(2)
APPLICATION
DC/DC convertor, High voltage switching
0.8
0.13
0∼0.1
1.1
TERMINAL CONNECTER
(1) BASE
(2) EMITTER
(3) COLLECTOR
JEITA：SC-59
JEDEC：Similar toTO-236
MAXIMUM RATINGS （Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
300
7
300
50
150
150
-55∼+150
Unit
V
V
V
mA
mW
℃
℃
MARKING
4W
ELECTRIC CHARACTERISTICS （Ta=25℃）
Symbol
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Collector-Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Test conditions
I
C
=50µA，I
E
=0
I
E
=50µA，I
C
=0
I
C
=1mA，R
BE
=∞
V
CB
=300V，I
E
=0
V
EB
=5V，I
C
=0
V
CE
=10V，I
C
=1mA
I
C
=10mA，I
B
=1mA
V
CE
=10V，I
E
=-10mA
V
CB
=6V，I
E
=0，f=1MHz
Limits
Min
300
5
300
-
-
50
-
-
-
Typ
-
-
-
-
-
-
-
50
1.9
Max
-
-
-
0.5
0.5
305
1.0
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.4
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
