TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INC5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5
0.5
DESCRIPTION
INC5001AC1 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for relay draive or Power supply application.
.
Unit:�½��½�
0.95
2.9
1.90
FEATURE
●Super mini package for easy mounting
● Low VCE(sat) V
CE(sat)
=0.25V max(@I
C
=500mA/I
B
=50mA)
● High collector current
● High voltage
V
CEO
=60V
I
C
=1A
①
②
③
1.1
0.95
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
0.8
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
80
5
60
1
2
200
+150
-55�½�+150
Unit
V
V
V
A
A
mW
℃
℃
JEITA:SC-59
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
I
C
=10μA , I
E
=0
I
E
=10μA , I
C
=0
I
C
=1mA ,R
V
V
V
CB
EB
BE
0�½�0.1
0.16
Limits
Min
80
5
60
-
-
130
-
-
-
Typ
-
-
-
-
-
-
-
240
-
Max
-
-
-
0.1
0.1
320
0.25
-
10
V
MHz
pF
Test conditions
0.4
Unit
V
V
V
uA
uA
=∞
=80V, I
E
=0mA
=5V, I
C
=0mA
=4V, I
C
=0.1A
=10V, I
E
=-50mA
=10V, I
E
=0mA,f=1MHz
CE
I
C
=500mA ,I
B
=50mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION