<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INC5004AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
INC5004AP1 is a silicon NPN transistor.
It is designed with high voltage.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：½½
1.5
FEATURE
・Small package for easy mounting.
・E to B High voltage V
EBO
=9V
・Low voltage VCE(sat)=0.28V(Type)
0.8 MIN
・High collector current
I
CM
=8A
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
1.5
APPLICATION
Inverter, Stroboscope flash
DC-DC converter, High current switching
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
E：EMITTER
Ｅ: エミッタ
Ｃ: コレクタ
C：COLLECTOR
Ｂ: ベース
B：BASE
JEDEC：―
JEITA:SC-62
EIAJ : SC-62
JEDEC:SOT-89
JEDEC :
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
C
CM
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current(P
C
=2W)
Peak collector current
*1
RATING
50
9
20
5
8
500
*2
2
＋150
-55½＋150
UNIT
V
V
V
A
A
mW
mW
℃
℃
MARKING
Type Name
B J
W
LOT №
h
FE
ITEM
P
C
T
j
T
stg
*1
*2
Collector dissipation(Ta=25℃)
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
Single pulse
Pw=10msec
Mounted on a glass ceramics board (46mm×19mm×0.8mm)
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
hFE1
hFE2
V
CE(sat)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=10μA，I
E
=0A
I
E
=10μA，I
C
=0A
I
C
=1mA，R
BE
=∞
V
CB
=40V，I
E
=0A
V
EB
=7V，I
C
=0A
V
CE
=2V，I
C
=500mA
V
CE
=2V，I
C
=2A
I
C
=3A，I
B
=100mA
V
CE
=6V, I
E
=-50mA
V
CE
=10V, I
E
=0A, f=1MHz
LIMITS
MIN
50
9
20
-
-
230
150
-
-
-
TYP
-
-
-
-
-
-
-
0.28
150
-
MAX
-
-
-
100
100
600
-
0.8
-
50
UNIT
V
V
V
nA
nA
-
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
