.
INC2002AX SERIES
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
hFE - IC
10000
DC REVERSE CURRENT GAIN：hFER
DC FORWARD CURRENT GAIN：hFE
hFER- IE
10000
1000
1000
100
100
10
Ta=25℃
VCE=5V
1
0.1
1
10
100
COLLECTOR CURRENT：IC (mA)
VCE(sat) - IC
1000
10
Ta=25℃
VEC=5V
0.1
1
10
100
EMITTER CURRENT：IE (mA)
1000
1
1000
COLLECTOR TO EMITTER SATURATION
VOLTAGE：VCE（sat）（mV）
fT - IE
100
TRANSITION FREQUENCY：fT(MHz)
Ta=25℃
IC/IB=20
100
80
60
40
20
0
Ta=25℃
VCE=10V
10
1
0.1
1
10
100
COLLECTOR CURRENT：IC（mA）
1000
-1
-10
EMITTER CURRENT：IE(mA)
-100
Cob - VCB
100
COLLECTOR OUTPUT CAPACITANCE：
Cob(pF)
Ron - IB
10
Ta=25℃
ON RESISTANCE：Ron (Ω)
10
1
1
Ta=25℃
IE=0mA
f=1MHz
0.1
0.1
1
10
COLLECTOR TO BASE VOLTAGE：VCB(V)
100
0.1
0.1
1
BASE CURRENT：IB(mA)
10
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
