.
INC2001AX SERIES
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING（Ｔ�½�＝２５℃）
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
INC2001AT2
RATING
INC2001AU1
INC2001AM1
40
40
20
600
150
+150
-55�½�+150
LIMIT
TYP
200
INC2001AC1
UNIT
V
V
V
mA
mW
℃
℃
125（※）
+125
-55�½�+125
ELECTRICAL CHARACTERISTICS（Ｔ�½�＝２５℃）
SYMBOL
Ｖ
（ＢＲ）ＣBＯ
Ｖ
（ＢＲ）EBＯ
Ｖ
（ＢＲ）CEＯ
Ｉ
ＣＢＯ
Ｉ
EＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
�½�
Ｔ
C
ob
R
ON
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
Output “ON” resistance
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
C
=50μA，I
E
=0mA
I
E
=50μA，I
C
=0mA
I
C
=1mA，R
BE
=∞
V
CB
=40V，I
E
=0mA
V
EB
=40V，I
C
=0mA
V
CE
=5V，I
C
=10mA
I
C
=50mA，I
B
=2.5mA
V
CE
=10V，I
E
=-10mA，f=100MHz
V
CB
=10V，I
E
=0A，f=1MHz
I
B
=5mA，R
L
=1kΩ
MIN
40
40
20
MAX
UNIT
V
V
V
μA
μA
－
mV
MHz
pF
Ω
820
40
50
5.0
0.65
0.5
0.5
2500
150
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
100
Ta=25℃
100uA
COMMON EMITTER TRANSFER
50
VCE=5V
COLLECTOR CURRENT : IC (mA)
80uA
70uA
60uA
COLLECTOR CURRENT : IC (mA)
80
90uA
40
60
50uA
40uA
30uA
30
Ta=75℃
20
40
25℃
-40℃
20uA
10uA
20
10
IB=0uA
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE : VBE (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
