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INA6006AP1 参数 Datasheet PDF下载

INA6006AP1图片预览
型号: INA6006AP1
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY申请PNP硅外延型 [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE]
分类和应用:
文件页数/大小: 4 页 / 169 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
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<SMALL-SIGNAL TRANSISTOR>
INA6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AP1 is a silicon PNP transistor.
It is designed with high voltage.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT:½½
1.5
FEATURE
・Small package for easy mounting.
・High voltage V
CEO
= -150V
・Complementary : INC6006AP1
0.8 MIN
・Low voltage VCE(sat) = -0.5V(MAX)
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
APPLICATION
High voltage switching.
1.5
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
E:
E:EMITTER
エミッタ
C:
C:COLLECTOR
コレクタ
B: ベース
B:BASE
JEITA:SC-62
EIAJ : SC-62
JEDEC:SOT-89
JEDEC :
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
CM
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak collector current
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-160
-5
-150
-200
-100
500
+150
-55½+150
UNIT
V
V
V
mA
mA
mW
MARKING
Type Name
B E
W
LOT №
LIMITS
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.8
P
C
T
j
T
stg
h
FE
ITEM
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½FE1
½FE2
½FE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
B to E on voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=-100μA,I
E
=0mA
I
E
=-10μA,I
C
=0mA
I
C
=-1mA,R
BE
=∞
V
CB
=-120V,I
E
=0mA
V
EB
=-3V,I
C
=0mA
VCE=-5V,I
C
=-1mA
VCE=-5V,I
C
=-10mA
VCE=-5V,I
C
=-50mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
VCE=-5V,I
C
=-10mA
VCE=-10V,I
E
=10mA
VCB=-10V,I
E
=0mA,f=1MHz
MIN
-160
-5
-150
-
-
45
90
45
-
-
-
-
-
100
-
MAX
-
-
-
-100
-100
-
270
-
-0.2
-0.5
-1.0
-1.0
-0.77
300
6
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION