PRELIMINARY
Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INA6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPCAL CHARACERISTICS
Common Emitter Output
-50
Ta=25℃
-100
-2.0mA
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
-0.2mA
Common Emitter Transfer
Ta=25℃
VCE=-10V
Collector Current : IC (mA)
Collector Current : IC (mA)
-40
-10
Ta=125℃
75℃
25℃
-25℃
-1
-30
-20
-0.1mA
-10
IB=-0.05mA
0
0
-5
Collector-Emitter Voltage : VCE (V)
-10
-0.1
0
-0.2
-0.4
-0.6
-0.8
-1
Base-Emitter Voltage : VBE (V)
hFE-IC
1000
Ta=125℃
75℃
100
25℃
-25℃
Ta=25℃
VCE=-10V
-10
VCE(sat)-IC
Ta=25℃
IC/IB=10
Collector-Emitter
Saturation Voltage : VCE(sat) (V)
DC Forward Current Gain : hFE
-1
Ta=125℃
75℃
-0.1
25℃
-25℃
10
1
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
Collector Current : IC (mA)
Collector Current : IC (mA)
fT-IE
100
Cob-VCB
Collector Output Capacitance : Cob (pF)
Ta=25℃
VCE=-30V
-10V
-6V
100
Ta=25℃
Gain Bandwidth Product : fT (MHz)
10
10
1
1
10
Emitter Current : IE (mA)
100
1
-0.1
-1
-10
-100
Collector-Base Voltage : VCB (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
