TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5
0.5
DESCRIPTION
INA5001AC1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
.
Unit：�½��½�
0.95
2.9
1.90
FEATURE
●Super mini package for easy mounting
● Low VCE(sat) V
CE(sat)
=-0.5 V max(@I
C
=-500mA/I
B
=-50mA)
● High collector current
● High voltage
I
C
=-1A
①
②
③
V
CEO
=-50V
1.1
0.16
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
0.8
0.95
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-5
-50
-1
-2
200
＋150
-55�½�＋150
Unit
V
V
V
A
A
mW
℃
℃
JEITA：SC-59
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
Test conditions
I
C
=-10μA , I
E
=0
I
E
=-10μA , I
C
=0
I
C
=-1mA ,R
V
V
V
CB
EB
BE
0�½�0.1
0.4
Limits
Min
-50
-5
-50
-
-
160
-
-
-
Typ
-
-
-
-
-
-
-
120
12
Max
-
-
-
-0.1
-0.1
380
-0.5
-
-
V
MHz
pF
Unit
V
V
V
uA
uA
=∞
=-50V, I
E
=0mA
=-5V, I
C
=0mA
=-4V, I
C
=-0.1A
=-2V, I
E
=500mA
=-10V, I
E
=0mA,f=1MHz
CE
I
C
=-500mA ,I
B
=-50mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
