PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INA1001AC1 is a silicon PNP epitaxial type transistor.
It is designed with high collector current and small V
CE(sat)
.
2.8
1.5
0.65
UNIT：mm
0.95
0.95
・High collector current(I
C
=-500mA)
・Low collector saturation voltage
(V
CE（sat）
<-0.25V
max
；I
C
=-100mA、I
B
=-10mA)
・High voltage V
CEO
=-80V(Type)
2.8
1.90
・Super mini package for easy mounting
①
②
③
1.1
APPLICATION
Power supply, Relay drive
0.8
0½0.1
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-80
-80
-4
-500
200
＋150
-55½＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
½
ＦＥ1
½
ＦＥ2
V
CE(sat)
f
T
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
TEST CONDITIONS
I
C
=-1mA，I
B
=0mA
I
C
=-100μA，I
E
=0mA
I
E
=-100μA，I
C
=0mA
V
CB
=-80V，I
E
=0mA
V
EB
=-4V，I
C
=0mA
V
CE
=-1V，I
C
=-10mA
V
CE
=-1V，I
C
=-100mA
I
C
=-100mA，I
B
=-10mA
V
CE
=-1V，I
E
=100mA，f=100MHz
MIN
-80
-80
-4
-
-
95
95
-
50
LIMITS
TYP
MAX
-
-
-
-
-
-
-
-0.1
-
-0.1
-
-
-
-
-
-0.3
-
-
UNIT
V
V
V
μA
μA
-
-
V
MHz
ISAHAYA ELECTRONICS CORPORATION
0.13
AFD
0.4
FEATURE
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
