〈FIELD-EFFECT TRANSISTOR〉
2SK930
FOR LOW FREQUENCY AMPLIFY APPLICATION
N CHANNEL JUNCTION TYPE
DESCRIPTION
2SK930 is a super mini outline resin sealed N channel junction type
FET. It is designed for low frequency voltage amplify, application and
analog switch application.
0.425
2.1
1.25
0.425
OUTLINE DRAWING
Unit：
�½��½�
0.65
FEATURE
● Small type for mounting.
● High |yfs| �½�
�½�
�½��½��½�=3mS（typ）
●Low R
DS
（
ON
） R
DS
(
ON
)=250Ω（typ）
2.0
1.3
①
②
③
0.9
General purpose voltage amplify, analog switch circuit for stereo,
cassette deck, VTR.
0.7
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：SOURCE
②：DRAIN
③：GATE
MAXIMUN RATINGS（Ta=25℃）
Symbol
V
GDO
I
G
P
T
Tch
Tstg
Parameter
Gate to Drain voltage
Gate current
Total allowable dissipation
Channel temperature
Storage temperature
Ratings
-50
10
150
+150
-55�½�+150
Unit
V
mA
mW
℃
℃
TYPE NAME
Limits
Min
-50
-
1.0
-0.3
1.0
-
-
-
-
C
1.0�½�3.0
Typ
-
-
-
-1.5
3.0
10
8
1.5
250
D
2.5�½�6.0
Max
-
-1
12
-6.0
-
-
-
-
-
IDSS ITEM
MARKING
0�½�0.1
K C
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）GDO
I
GSS
I
DSS *
V
GS
（
OFF
）
�½�yfs�½�
�½�yos�½�
Ciss
Crss
R
DS(ON)
Parameter
Gate to Drain breakdown voltage
Gate leakage current
Drain current
Cut off voltage
Forward transfer admittance
Output admittance
Input capacitance
Feedback capacitance
Drain to Source resistor
Test conditions
I
G
=-10μA, I
S
=0A
V
GS
=-30V, V
DS
=0V
V
DS
=10V, V
GS
=0V
V
DS
=10V, I
D
=10μA
V
DS
=10V, V
GS
=0V, f=1kHz
V
DS
=10V, V
GS
=0V, f=1kHz
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, V
GS
=0V, f=1MHz
0.15
APPLYCATION
0.65
0.3
Unit
V
nA
mA
V
mS
μS
pF
pF
Ω
V
DS
=10mVrms(1kHz), V
GS
=0V, I
DSS
=
5mA
ITEM
IDSS(mA)
＊：It shows IDSS classification in right table.
E
5.0�½�12
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
