〈SMALL-SIGNAL TRANSISTOR〉
2SC6053
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
250
COLLECTOR CURRENT Pc (mW)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
1000
DC FORWARD CURRENT GAIN hFE
200
150
100
50
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta(℃)
100
Ta=25℃
VCE=4V
10
1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
COMMON EMITTER OUTPUT (1)
800
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
IB=9mA
IB=10mA
IB=8mA
IB=7mA
COMMON EMITTER OUTPUT (2)
400
IB=1.0mA
IB=0.9mA
IB=0.8mA
Ta=25℃
600
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
300
IB=0.7mA
IB=0.6mA
IB=0.5mA
400
200
IB=0.4mA
IB=0.3mA
IB=0.2mA
200
IB=0mA
100
IB=0.1mA
0
0
1
2
3
4
C TO E VOLTAGE VCE(V)
0
IB=0mA
5
0
4
8
12
16
20
C TO E VOLTAGE VCE(V)
COMMON EMITTER TRANSFER (1)
800
COLLECTOR CURRENT IC(mA)
Ta=25℃
VCE=4V
COMMON EMITTER TRANSFER (2)
10
COLLECTOR CURRENT IC(mA)
8
6
4
2
0
Ta=25℃
VCE=4V
600
400
200
0
0
0.2
0.4
0.6
0.8
1
B TO E VOLTAGE VBE(V)
0
0.2
0.4
0.6
0.8
1
B TO E VOLTAGE VBE(V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
