〈Transistor〉
DEVELOPING
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
�½�
ＦＥ
＊
�½�
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
TEST CONDITIONS
I
C
=100uA，R
BE
=∞
V
CB
=60V，I
E
=0mA
V
EB
=4V，I
C
=0mA
V
CE
=6V，I
C
=1mA
V
CE
=6V，I
C
=0.1mA
I
C
=30mA，I
B
=1.5mA
V
CE
=6V，I
E
=-10mA
V
CB
=6V，I
E
=0mA，f=1MHz
Item
�½�
ＦＥ
Marking
Q
120∼270
EQ
R
180∼390
ER
200
1.5
S
270∼560
ES
120
70
0.3
LIMITS
MIN
60
0.5
0.5
560
TYP
MAX
UNIT
V
μA
μA
-
-
V
MHz
pF
＊ It shows �½�
ＦＥ
classification in right table.
Item
�½�
ＦＥ
Marking
E
150∼300
EE
F
250∼500
EF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
